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CES 2017: Snapdragon 835 details leaked days before reveal; will be 27% faster than the 820

It will power most premium smartphones which will be revealed in 2017. And now, days before Qualcomm could officially disclose details about its flagship Snapdragon 835 chipset, a leak has spilled cold water on the anticipation. Full details were to be disclosed at a presentation by Qualcomm during the CES 2017 on January 6.

In what looks like a legitimate press release, key details about the new chipset tell us that it will be smaller, faster and more energy efficient than any other chipset built in the past. Paving the way for thinner and more energy efficient phones, the Snapdragon 835 will use a 10nm design with over 3 billion transistors. It will be 30% smaller, 27% faster, and 40% more power-efficient than its predecessor, the Snapdragon 820.

Details in the press release promise a  1+ day of talk time, 5+ days of music playback, and 7+ hours of 4K video streaming. With Quick Charge 4 technology, five minutes of charging is likely to provide five hours of battery life. Although these figures have probably been taken from a test device and provide a reference of what we can be expected from a Snapdragon 835-powered phone.

A few more details reveal the following:

Source: Evleaks

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