Smart phone manufacturer are rolling out new phones with the latest and powerful, Snapdragon 821 processor. In an ‘upgrade’ move for the OnePlus 3, the company replaced its Snapdragon 820 SoC with the SD 821 and launched it as the OnePlus 3T. While the 3T is just an upgraded version of the OP3 with most of the tech-mech identical, an all new OnePlus 4 is rumoured to be under development. There are reports suggesting that OP4 will be powered by the upcoming Snapdragon 830 processor but it seems that the maker of the SoC have different plans.
In latest news, Qualcomm has officially announced the Snapdragon 835 mobile processer giving a skip to the 830 in the chronology. For the new chip Qualcomm and Samsung have joined hands for the 10nm Process Technology. The new processor will use Samsung’s 10-nanometer (nm) FinFET process technology and is in production already. Samsung announced they are the first in the industry to enter mass production of 10nm FinFET technology Snapdragon 835 powered commercial devices are expected to hit the markets by the first half of 2017.
Along with the new SoC, Qualcomm introduced the latest generation of its fast-charging technology, Quick Charge 4. This new update d fast charging tech will be available on the Snapdragon 835 processor. Quick Charge 4 is designed to provide a superior charging solution by delivering faster charge times and higher efficiency than prior generations.
The features of Quick Charge 4 are:
- Five or more hours of usage with only five minutes of charging.
- Qualcomm Dual Charge – parallel charging technology provides 20 % faster charging and up to 30 percent higher efficiency.
- Integrates USB Type-C and USB-PD support
- features the third release of INOV (Intelligent Negotiation for Optimum Voltage), power-management algorithm for real-time thermal management
- Advance charging optimization by automatically determining and selecting the optimal power transfer level for a given thermal condition.
- Advanced safety features for both the adapter and mobile device
- low impedance, up to 95% peak efficiency.
Features of Samsung’s 10nm FinFET technology as compared to its 14nm FinFET predecessors-
- Samsung’s 10nm technology allows up to a 30% increase in area efficiency
- 27% higher performance or up to 40% lower power consumption.
- Using 10nm FinFET, the Snapdragon 835 processor will offer a smaller chip footprint
- OEMs get more usable space inside upcoming products to support larger batteries or slimmer designs.
- Process improvements, combined with a more advanced chip design, are expected to bring significant improvements in battery life.
Commenting on the occasion, Jong Shik Yoon, executive vice president and head of foundry business, Samsung said that Samsung is pleased to have the opportunity to work closely with Qualcomm Technologies in producing the Snapdragon 835 using their new 10nm FinFET technology. This collaboration is an important milestone for Samsung’s foundry business as it signifies confidence in Samsung’s leading chip process technology.
On the new introduction, Keith Kressin, senior vice president, product management, Qualcomm Technologies. Inc. said that the company is excited to continue working together with Samsung in developing products that lead the mobile industry. Using the new 10nm process node is expected to allow their premium tier Snapdragon 835 processor to deliver greater power efficiency and increase performance while also allowing to add a number of new capabilities that can improve the user experience of tomorrow’s mobile devices.
